▎ 摘　　要

NOVELTY - The device (1) has a graphene p-n vertical homo junction diode by assessing the optical and electrical characteristics of graphene p-n junction produced according to doping amount. The highly resistive layer is formed in the boundary face of the graphene (200,300). The electrodes (210,310) are formed respectively on the substrate (100) and arranged at the lower portion of the graphene (200). USE - Semiconductor device. ADVANTAGE - The excellent property of this graphene is utilized. The dynamic and the electrical optical property of the semiconductor device can be improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for semiconductor device fabricating method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the semiconductor device. Semiconductor device (1) Substrate (100) Graphene (200,300) Electrodes (210,310)