• 专利标题:   Fabricating hybrid element involves forming multiple first elements on first substrate, separating multiple second elements grown second substrate from second substrate, and transferring multiple second, separated from second substrate, onto first substrate, where transfer, multiple second elements.
  • 专利号:   US2022262784-A1, KR2022117104-A, KR2022117114-A
  • 发明人:   HONG S, PARK J, KIM H, KIM D, HWANG J, HWANG K, HWANG K W, HWANG J S, KIM H J, HONG S W
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   H01L025/00, H01L025/16, H01L027/15, H01L021/52, H01L025/18, H01L031/0224, H01L031/101, H01L031/18, H01L033/00, H01L033/36, H01S005/02
  • 专利详细信息:   US2022262784-A1 18 Aug 2022 H01L-025/00 202268 English
  • 申请详细信息:   US2022262784-A1 US667241 08 Feb 2022
  • 优先权号:   US149824P, KR072400, KR150860

▎ 摘  要

NOVELTY - Fabricating hybrid element involves forming multiple first elements on a first substrate, separating multiple second elements grown on a second substrate from the second substrate, a material of the second substrate is different from a material of the first substrate, and transferring the multiple second elements, separated from the second substrate, onto the first substrate, where in the transfer, the multiple second elements are spaced apart from each other by a fluidics self-assembly method, and each of the multiple second elements comprises a shuttle layer grown on the second substrate, an element layer grown on the shuttle layer, and an electrode layer on the element layer. USE - Method for fabricating hybrid element (claimed). ADVANTAGE - The method has provided a hybrid element in which elements of different types are arranged. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a hybrid element, which comprises a first element formed on a first substrate, and a second element formed on the first substrate and different from the first element, where the second element comprises a shuttle layer configured to be grown on a second substrate formed of a material different from a material of the first substrate, an element layer which is provided on the shuttle layer and is configured to be grown on the shuttle layer, and an electrode layer provided on a surface of the element layer.