▎ 摘　　要

NOVELTY - Surfaces of silicon carbide components is polished with homogeneous distribution of carbon, and cleaned. At least one polished surfaces subjected to graphitization process by performing annealing process at 1500-1700 degrees C for 10-20 minutes under argon atmosphere. Thus, graphene is manufactured on polycrystalline silicon carbide. USE - Manufacture of graphene on polycrystalline silicon carbide used as bearing element e.g. micropositioning slide bearing in mechanical engineering (claimed). ADVANTAGE - The method efficiently provides graphene-containing polycrystalline silicon carbide having low friction.