▎ 摘　　要

NOVELTY - The method involves processing graphite, and processing graphene by ion implantation, plasma bombardment and/or etching processes. Annealing treatment is performed to the processed graphene with doping element, where the doping element is selected from nitrogen, phosphorus and boron. The ion implantation is realized by injecting ions under the graphene in vacuum condition with vacuum degree of not less than 10-4 Mpa. The plasma bombardment and/or etching are performed by conducting plasma radiation on the graphene in vacuum condition with vacuum degree of not less than 10-4 Mpa. USE - Method for manufacturing a doped graphite alkene that is utilized in a semiconductor material (claimed). ADVANTAGE - The method enables controlling electrical property of graphite alkene, and enables realizing simple and reliable process and large scale industrial production. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic Illustration of a method for manufacturing a doped graphite alkene.