▎ 摘　　要

NOVELTY - The field effect transistor comprises a substrate (10) and a graphene layer (12) that is provided on the substrate. A drain electrode (26) is provided on the graphene layer. A gate insulating film (14) is provided on the graphene layer. Multiple gate electrodes (20,22) are provided on the gate insulating film. A supplemental electrode (28) is in contact with the graphene layer. The second gate electrode is short-circuited with the source electrode. USE - Field effect transistor. ADVANTAGE - The field effect transistor comprises a substrate and a graphene layer that is provided on the substrate, where drain electrode is provided on the graphene layer and a gate insulating film is provided on the graphene layer, and thus enables to improve the drain conductance, reduces the drain conductance, increases the high frequency performance and reduces drain access resistance. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a field effect transistor. Substrate (10) Graphene layer (12) Gate insulating film (14) Gate electrodes (20,22) Drain electrode (26) Supplemental electrode (28)