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  • 专利标题:   Manufacture of graphene nanomesh involves forming graphene and photosensitive film on substrate, exposing photosensitive film using dot-lens mask, forming dot pattern on photosensitive film and etching dot pattern.
  • 专利号:   KR2016004594-A
  • 发明人:   CHANG W S, JEONG S H, KIM D J
  • 专利权人:   KOREA INST MACHINERY MATERIALS
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016004594-A 13 Jan 2016 C01B-031/04 201609 Pages: 10 English
  • 申请详细信息:   KR2016004594-A KR083092 03 Jul 2014
  • 优先权号:   KR083092

▎ 摘　　要

NOVELTY - Manufacture of graphene nanomesh involves forming graphene and photosensitive film on a substrate, exposing photosensitive film using dot-lens mask, forming dot pattern on the photosensitive film and forming graphene nanomesh by etching dot pattern on the photosensitive film. USE - Manufacture of graphene nanomesh (claimed).