• 专利标题:   High dielectric nanocomposite film used in electronic, electrical and cable industries comprises cyanoethyl cellulose, graphene and solvent.
  • 专利号:   CN105906846-A
  • 发明人:   LIU Y, WANG Y, SHAO Z, WANG F, WANG M, ZHOU J, ZHOU Z, FAN Z, LIU C
  • 专利权人:   BEIJING NORTH CELLULOSE CENTURY TECHNOLO, BEIJING INST TECHNOLOGY, ZHONGXIANG JINHANJIANG REFINED COTTON CO
  • 国际专利分类:   C08J005/18, C08K003/04, C08K003/34, C08L001/28
  • 专利详细信息:   CN105906846-A 31 Aug 2016 C08L-001/28 201675 Pages: 7 Chinese
  • 申请详细信息:   CN105906846-A CN10290761 04 May 2016
  • 优先权号:   CN10290761

▎ 摘  要

NOVELTY - High dielectric nanocomposite film comprises 10 pts. wt. cyanoethyl cellulose, 0.1-1.5 pts. wt. graphene and 300-500 pts. wt. solvent. Nanocomposite film is prepared by using cyanoethyl cellulose as a matrix, graphene as filler, montmorillonite as dispersant, and preparing a solution with solvent to form a film. USE - High dielectric nanocomposite film used in electronic, electrical and cable industries. ADVANTAGE - High dielectric nanocomposite film has renewable resource, low dielectric loss, cost effective, and also has certain application prospect in field of artificial muscle, absorbing material, simple flow, and good market prospect. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing high dielectric nanocomposite film, which involves: (A) preparing an oxidized graphene oxide by Hummers method; (B) adopting microwave method or the heating method to reduce graphene oxide; (C) dispersing 10 pts. wt. oxidized graphene into solvent; (D) adding 0.01 pts. wt. reducing agent and carrying out in microwave reactor, where power of 100-800 watt and temperature of 40-60 degrees C for 5-20 minutes; (E) centrifuging mixture, washing and drying to obtain reductive graphene; (F) reducing oxidized graphene at 980-1000 degrees C for 30 seconds; (G) dissolving cyanoethyl cellulose into 300 pts. wt. solvent; (H) adding graphene and 0.1-1 pts. wt. montmorillonite under stirring to prepare film-forming solution; (I) pouring film-forming solution onto table smooth surface of petri dish; and (J) placing dish in an oven at 50-60 degrees C and drying.