• 专利标题:   Determining order of stacking of graphene samples containing single layer of graphene comprises e.g. measuring Raman G-mode intensities of single-layer graphene and graphene samples and determining single graphene region in graphene sample.
  • 专利号:   CN107389653-A
  • 发明人:   TAN P, LIN M, LIU X
  • 专利权人:   INST SEMICONDUCTORS CHINESE ACAD SCI
  • 国际专利分类:   G01N021/65
  • 专利详细信息:   CN107389653-A 24 Nov 2017 G01N-021/65 201804 Pages: 18 Chinese
  • 申请详细信息:   CN107389653-A CN10546012 06 Jul 2017
  • 优先权号:   CN10546012

▎ 摘  要

NOVELTY - Determining order of stacking of graphene samples containing single layer of graphene comprises e.g. (i) measuring Raman G-mode intensities of single-layer graphene and graphene samples by Raman spectroscopy, and determining single graphene region in graphene sample, and (ii) testing optical contrast spectrum of multilayer graphene region immediately adjacent to monolayer of graphene in a graphene sample using spectrometer, as well as stacking optical contrast spectrum of each different region of multi-layer graphene in AB to obtain characteristic peak. USE - The method is useful for determining order of stacking of graphene samples containing single layer of graphene (claimed). ADVANTAGE - The method: is simple and clear; extends to determination of stacking order of graphene samples above 4 layers; and avoids damage to sample. DETAILED DESCRIPTION - Determining order of stacking of graphene samples containing single layer of graphene comprises (i) measuring Raman G-mode intensities of single-layer graphene and graphene samples by Raman spectroscopy, and determining single graphene region in graphene sample, (ii) testing optical contrast spectrum of a multilayer graphene region immediately adjacent to the monolayer of graphene in a graphene sample using a spectrometer, as well as stacking the optical contrast spectrum of each different region of the multi-layer graphene in AB to obtain the characteristic peak by comparing the optical contrast spectra of the two, and (iii) selecting the laser that matches the characteristic peak, testing the shear mode and the breathing mode of each different region of the graphene sample using ultra-low wave number Raman spectrometer, comparing the peak positions of the shear mode and the respiration mode with the prediction results of the linear chain model and determining the total number of layers and the order of stacking for each different area of the graphene sample.