▎ 摘　　要

NOVELTY - Manufacture of field effect transistor using graphene involves forming graphene on substrate, arranging pattern-forming fixture on substrate on which graphene is formed, supplying solution (S1), generating evaporation-induced self assembly, such that pattern is formed, transferring graphene onto primary solute to form primary graphene pattern, intersecting primary graphene pattern to form secondary graphene pattern, forming dielectric layer on secondary graphene pattern, and forming gate electrode on the dielectric layer. USE - Manufacture of field effect transistor (claimed). ADVANTAGE - The field effect transistor is economically manufactured by simple method.