▎ 摘　　要

NOVELTY - The method involves preparation of a graphene film by epitaxy on a metal preparation layer. The graphene film is transferred on a substrate that is arranged distinct from the metal preparation layer. A set of nanofils or a two-dimensional layer of a semiconductor material is deposited by electrodeposition on the graphene. A barrier layer is formed on a support surface. A layer of solid amorphous carbon is formed on the support surface. The graphene layer is formed by diffusion of carbon in the metal preparation layer. USE - Method for realization of a hybrid graphene/semiconductor material for photovoltaic or optoelectronic applications. ADVANTAGE - The set of nanofils or the two-dimensional layer of the semiconductor material is deposited by electrodeposition on the graphene, thus allowing to prepare the hybrid material associated with graphene and semiconductor in an improved manner at reduced costs without the need for annealing process. DESCRIPTION OF DRAWING(S) - The drawing shows a photograph of an image obtained by scanning electron microscope for a graphene film having undergone a treatment of annealing to 700 degrees Celsius for a duration of 3 minutes.