▎ 摘　　要

NOVELTY - The detector has a dual-layer graphene electronic transmission layer that is packaged between upper and lower layers of hexagonal boron nitride to form a van der Waals heterojunction. A lower portion of the heterjunction is placed with graphite as a back gate (6). An upper portion of a heterojunction is placed on the top of graphene as a top gate. Two sides of the homojunction are carried with an active electrode and a drain electrode (2) on both sides. The source electrode (1) and the drain electrode are made of the chromium/gold layer with the thickness of 70nm. The detector is placed on an insulating substrate (7) made of silicon dioxide material. USE - Double-layer graphene photoelectric detector continuously adjustable from far infrared to terahertz waveband for converting optical signal into electric signal. Can also be used as photon detector and heat detector. ADVANTAGE - The detector uses boron nitride (BN) package and graphene transparent top grid and graphite back grid to form double-gate control, which effectively improves the carrier concentration and mobility of the graphene, thus greatly improving the photoelectric response of a graphene device. The detector can be continuously adjustable from far infrared to terahertz wave band by controlling the double-layer graphene band gap through electric field control, and can continuously adjust the band gap 0-250 mega hertz, and has high quality factor, excellent light sensitivity, fast response time, and is simple to prepare, with large scale popularization and application prospect. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the photoelectric detector. Source electrode (1) Drain electrode (2) Double-layer graphene (3) Graphite as a back gate (6) Insulating substrate (7)