▎ 摘　　要

NOVELTY - A graphene layer (203) is formed on a substrate (201). Several cuts (230) are formed in two different portions of the graphene layer. A source region is formed in one portion of the graphene layer. A drain region is formed in another portion of graphene layer. The source and drain regions are formed in the spaced apart state. USE - Method of fabricating graphene FET. ADVANTAGE - The contact resistance in the graphene FET is reduced by forming cuts in the graphene layer. The minimization of contact length and reduction of noise are possible. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the structure of the graphene FET. FET (200) Substrate (201) Graphene layer (203) Source electrode (204) Drain electrode (205) Cut (230)