• 专利标题:   N-doped graphene slurry is prepared by preparing N-doped graphene by adding graphite oxide into nitrogen source aqueous solution, performing hydrothermal reaction after dispersion.
  • 专利号:   CN113066981-A, CN113066981-B
  • 发明人:   LIU J, LI J, GENG H, GENG Y
  • 专利权人:   INNER MONGOLIA SHANSHAN TECHNOLOGY CO
  • 国际专利分类:   H01M010/0525, H01M004/36, H01M004/583, H01M004/62
  • 专利详细信息:   CN113066981-A 02 Jul 2021 H01M-004/62 202173 Pages: 13 Chinese
  • 申请详细信息:   CN113066981-A CN10303059 22 Mar 2021
  • 优先权号:   CN10303059

▎ 摘  要

NOVELTY - N-doped graphene slurry is prepared by preparing N-doped graphene by adding graphite oxide into a nitrogen source aqueous solution, performing hydrothermal reaction after dispersion, and adding the obtained solid-phase product into a nitrogen-containing organic solvent for dispersion to obtain a dispersion liquid A. The expanded graphite is dispersed in a nitrogen-containing organic solvent to obtain a dispersion liquid B. The dispersion liquid A and the dispersion liquid B are respectively placed in a microwave muffle furnace for treatment. The dispersion liquid A and the dispersion liquid B are mixed in a microwave muffle furnace to obtain a dispersion liquid C. The nitrogen-doped graphene slurry is prepared and sequentially sanded and homogenized the dispersion liquid C to obtain the N-doped graphene slurry for the modified graphite. USE - N-Doped graphene slurry. ADVANTAGE - The N-doped graphene slurry has obviously improved electrochemical performance of graphite, and promoted development of the high-performance graphene modified lithium ion battery graphite cathode material.