• 专利标题:   Phonovoltaic cell used as part of phonovoltaic pile of contiguous phonovoltaic cell comprises first and second conductor layer, first boron layer in contact with the first conductor layer, second boron layer in contact with the second boron layer.
  • 专利号:   US2021104403-A1, US11651957-B2
  • 发明人:   CURRAN P
  • 专利权人:   SEMINUCLEAR INC
  • 国际专利分类:   C07F007/21, C23C016/30, C23C016/38, C23C016/40, C30B029/40, C30B007/10, H01B001/06, H01L021/02
  • 专利详细信息:   US2021104403-A1 08 Apr 2021 H01L-021/02 202154 English
  • 申请详细信息:   US2021104403-A1 US425582 29 May 2019
  • 优先权号:   US167418P, US425582

▎ 摘  要

NOVELTY - Phonovoltaic cell comprises: a first conductor layer; a first boron layer in contact with the first conductor layer, where the first boron layer comprises icosahedral boron and hydrogen and having a higher relative atomic concentration of boron than any other atom; a second boron layer in contact with the first boron layer, where the second boron layer comprises icosahedral boron, hydrogen and oxygen and having a higher relative atomic concentration of boron than any other atom; and a second conductor layer in contact with the second boron layer, where an electrical potential is generated between the first conductor layer and the second conductor layer. USE - The cell is useful: as part of phonovoltaic pile of contiguous phonovoltaic cell ; in rectifier and a conductor for integrated circuit (all claimed) and for manufacturing low-dimensional materials supporting both self-thermalization and self-localization. ADVANTAGE - The cell utilizes the picocrystalline oxysilaboranes which are highly useful as back end of line interconnects in that, unlike graphene, the deposition of the picocrystalline oxysilaboranes is by a low-temperature and conformal vapor-phase-deposition. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (a) a rectifier comprising a first conductor layer, a first boron layer in contact with the first conductor layer, a second boron layer in contact with the first boron layer, a second conductor layer in contact with the second boron layer and the rectifier has an asymmetric electrical conductance between the first and second conductor layers; and (b) an integrated circuit comprising a first circuit element, a second circuit element, a conductor comprising icosahedral boron and hydrogen and having a higher relative atomic concentration of boron than any other atom, where the conductor further comprises a trace amount of a coinage metal, and the conductor electrically connects a first circuit element to a second circuit element in an integrated circuit.