• 专利标题:   Method for depositing material on graphene layer during fabrication of e.g. spintronic device, involves emitting plasma plume from magnetron assembly such that layer of deposition material is formed on graphene layer.
  • 专利号:   US2014151770-A1
  • 发明人:   CHEN C, GAJEK M J, RAOUX S
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L029/82, H01L043/12
  • 专利详细信息:   US2014151770-A1 05 Jun 2014 H01L-029/82 201444 Pages: 10 English
  • 申请详细信息:   US2014151770-A1 US689857 30 Nov 2012
  • 优先权号:   US689857

▎ 摘  要

NOVELTY - The method involves arranging a graphene layer (114) having an exposed planar surface (101) proximate to a magnetron assembly (102) that is operative to emit a plasma plume (106) along a line (108). The exposed planar surface of the graphene layer is arranged at an angle that is non-orthogonal to the line that intersects the exposed planar surface. The plasma plume is emitted from the magnetron assembly such that a layer of deposition material is formed on the graphene layer without appreciably damaging the graphene layer. USE - Method for depositing a material on a graphene layer during fabrication of a spintronic device. Can also be used for a FET. ADVANTAGE - The method ensures that the deposition material can be efficiently deposited on the graphene layer without appreciably damaging the graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for fabricating a spintronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a sputtering system. Exposed planar surface (101) Magnetron assembly (102) Plasma plume (106) Lines (108, 110) Graphene layer (114)