▎ 摘　　要

NOVELTY - The method involves providing a stack of charge doped graphene that is characterized by a doping level in a portion of the stack that exceeds a threshold doping level. A strain is imposed on the charge doped graphene to produce a tensile strain exceeding a threshold strain level in the stack of charge doped graphene. The combination of the threshold doping level and the threshold strain level are used to cause the critical temperature of the stack of charge doped graphene to exceed 3.0 Kelvin. USE - Method for producing graphene-based superconductive device (claimed) to used in industrial application. ADVANTAGE - Since the combined effects of charge doping and strain are used, the graphene is driven into the strong coupling regime and thus the graphene-based superconductor is allowed to operate at a critical temperature above zero Kelvin. The charge doping is enabled to enlarge the Fermi surface of graphene and tensile strain is enabled to increase electron-phonon coupling. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene-based superconductive device. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical view of the Eliashberg functions for charge-doped graphene.