▎ 摘　　要

NOVELTY - Silicon-based bonded graphene ceramic heat sink integrated structure comprises a high-power semiconductor chip (4), a solder layer (3), a copper metal circuit (2) and a silicon-based bonded graphene, which are sequentially arranged from top to bottom ceramic radiator. The silicon-based bonded graphene ceramic heat sink includes a ceramic heat sink and a layer of silicon-based bonded graphene coating provided on the surface of the ceramic heat sink. USE - Silicon-based bonded graphene ceramic heat sink integrated structure for use in a semiconductor power electronic device. ADVANTAGE - The silicon-based bonded graphene ceramic heat sink integrated structure reduces the copper heat dissipation substrate and the heat conduction gel structure in the conventional package structure, reduces the thermal resistance, and greatly improves the heat dissipation performance of semiconductor power electronic devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing silicon-based bonded graphene ceramic heat sink integrated structure, which involves: (A) placing the ceramic radiator in a chemical vapor deposition furnace, filling the chemical vapor deposition furnace with inert gas, and raising the temperature under the protection of the inert gas; (B) using the screen printing process to print the conductive copper paste on the upper surface of the silicon-based bonded graphene ceramic heat sink; and (C) adopting reflow soldering process to solder the high-power semiconductor chip to the upper surface of the copper metal circuit through the solder layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon-based bonded graphene ceramic heat sink integrated structure. Silicon-based bonded graphene ceramic heat sink (1) Copper metal circuit (2) Solder layer (3) High-power semiconductor chip (4)