▎ 摘　　要

NOVELTY - The method involves carrying out standard cleaning to Silicon carbide, removing the pollutant on a surface of the Silicon carbide, and cleaning the surface of the Silicon carbide by wafer using plasma enhanced chemical vapor deposition. A layer with 0.4 to 1.2 microns thickness is deposited on the surface of the Silicon carbide to form Silicon dioxide mask layer. A side gate structure transistor image window is etched on the Silicon dioxide mask layer. A pattern of a window is formed in a quartz tube. The pattern is heated at 700-1100 degrees centigrade. USE - Method for preparing an annealing film of a chlorine reaction side-gate graphene of a thin film transistor. ADVANTAGE - The method enables preparing the annealing film of the chlorine reaction side-gate graphene of the thin film transistor with high mobility, better performance and better continuity of the graphene transistor side gate structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic illustration of a method for preparing an annealing film of a chlorine reaction side-gate graphene of a thin film transistor.