▎ 摘　　要

NOVELTY - Manufacturing a backside illuminated image sensor device involves forming a dielectric layer (120) on a back surface of a semiconductor substrate, where the semiconductor substrate has a pixel array (110) formed on a front surface of the semiconductor substrate; patterning the dielectric layer to form scribe lines (130) surrounding the pixel array; forming a conductive shielding layer on the dielectric layer; patterning the conductive shielding layer to expose the scribe lines; forming a dielectric buffer layer (150) on the patterned conductive shielding layer and the dielectric layer; forming a color filter layer (160) on the dielectric buffer layer; and forming a microlens layer (170) on the color filter layer. USE - The method is useful for manufacturing a backside illuminated image sensor device (claimed) i.e. charge-coupled device (CCD) or complementary metal oxide semiconductor (CMOS) image sensor, of a digital camera. ADVANTAGE - The sensor prevents the wafer from being damaged by the accumulated electrostatic charges in a form of arcing to decrease the yield of the backside illuminated (BSI) sensor. The sensitivity of each pixel in the CMOS image sensor is improved. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) a method which involves forming a pixel array on a front-side of a substrate; depositing a dielectric layer on a backside of the substrate; etching scribe line regions in the dielectric layer; after etching the scribe line regions in the dielectric layer, forming one or more conductive shielding lines (140a) on the dielectric layer, the conductive shielding lines non-overlapping the pixel array; and forming a color filter layer overlapping the pixel array; and (2) a method which involves forming a pixel array on a substrate; depositing a dielectric layer on the substrate; patterning the dielectric layer to form scribe line regions in the dielectric layer; and forming one or more conductive shielding lines on the dielectric layer, the one or more conductive shielding lines each having an outermost side in vicinity of a boundary of the scribe line regions and an innermost side non-overlapping the pixel array. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a manufacturing process of a backside illuminated image sensor device with a conductive shielding layer. 110Pixel array 120Dielectric layer 130Scribe lines 150Dielectric buffer layer 160Color filter layer 170Microlens layer