• 专利标题:   Preparation of suspended graphene used for preparing nanoporous sensor, involves forming expected structure on silicon carbide substrate by semiconductor method, and high-temperature thermal-decomposing silicon carbide substrate.
  • 专利号:   CN104787754-A, CN104787754-B
  • 发明人:   SHAN X, HU Y, LU X, ZHOU Z
  • 专利权人:   CHINESE ACAD SCI PHYSICS INST
  • 国际专利分类:   C01B031/04, C01B032/184
  • 专利详细信息:   CN104787754-A 22 Jul 2015 C01B-031/04 201578 Pages: 9 Chinese
  • 申请详细信息:   CN104787754-A CN10122914 19 Mar 2015
  • 优先权号:   CN10122914

▎ 摘  要

NOVELTY - A expected structure is formed on a silicon carbide substrate by semiconductor method. The silicon carbide substrate is high-temperature thermal-decomposed in carbon-rich environment, to obtain suspended graphene. USE - Preparation of suspended graphene used for preparing nanoporous sensor (claimed). ADVANTAGE - The method enables environmentally-friendly, mechanized and automated preparation of suspended graphene, by simple method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nanoporous sensor.