• 专利标题:   Preparing graphene radiating fin used in mobile phone, involves adding ethyl orthosilicate and graphene oxide to ethanol and ethanediol, sintering, depositing mixture of silicon dioxide and graphene on silica and applying glass coating.
  • 专利号:   CN105141719-A
  • 发明人:   LEI C, PAN X
  • 专利权人:   CHANGZHOU HAOLI LAI PHOTO ELECTRICITY SC
  • 国际专利分类:   C01B031/04, H04M001/02
  • 专利详细信息:   CN105141719-A 09 Dec 2015 H04M-001/02 201633 Pages: 3 English
  • 申请详细信息:   CN105141719-A CN10469906 04 Aug 2015
  • 优先权号:   CN10469906

▎ 摘  要

NOVELTY - The preparation method of graphene radiating fin involves taking certain amount of ethyl orthosilicate and graphene oxide, dissolving in anhydrous ethyl alcohol and ethanediol solution, adding deionized water, repeatedly washing with deionized water, removing anhydrous ethyl alcohol and ethanediol solution, grinding into powder, depositing a layer of mixture of silicon dioxide and graphene on surface of silica, applying organic glass coating on surface, putting into high temperature furnace, heating at 800 degrees C in vacuum state and transferring to target chip. USE - Preparation of graphene radiating fin used in mobile phone. ADVANTAGE - The method enables effective preparation of graphene radiating fin used in mobile phone. DETAILED DESCRIPTION - The preparation method of graphene radiating fin involves taking a certain amount of ethyl orthosilicate and graphene oxide, dissolving in anhydrous ethyl alcohol and ethanediol solution, adding deionized water, heating to reflux for 2 hours, carrying out suction filtration, repeatedly washing with deionized water for several times, removing anhydrous ethyl alcohol and ethanediol solution, drying in control state in a muffle furnace, cooling to room temperature, sintering at 450-480 degrees C for 8 hours under vacuum state, grinding into powder, using electronic beam evaporation method for depositing a layer of mixture of silica and graphene on the surface of silica, applying organic glass coating on surface, putting into high temperature furnace and heating at 800 degrees C in vacuum state for 2 hours, and transferring to target chip.