• 专利标题:   Preparation of few-layer graphene film by normal pressure chemical vapor deposition, cleaning copper foil substrate, annealing copper foil for first time, carrying out nitric acid solution treatment to copper foil, and cooling graphene film.
  • 专利号:   CN112746263-A, CN112746263-B
  • 发明人:   ZHAO B, LI X, ZHANG Q, ZHOU T, WANG R, WANG C, YUAN L
  • 专利权人:   CHIA TAI ENERGY MATERIALS DALIAN LTD
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/44
  • 专利详细信息:   CN112746263-A 04 May 2021 C23C-016/26 202146 Pages: 10 Chinese
  • 申请详细信息:   CN112746263-A CN11543892 23 Dec 2020
  • 优先权号:   CN11543892

▎ 摘  要

NOVELTY - Few-layer graphene film is prepared by cleaning copper foil substrate by dipping the copper foil into acetone, isopropanol or ethanol, de-ionized water; annealing copper foil for first time in a mixture of argon and hydrogen; carrying out nitric acid solution treatment to copper foil annealed for first time; stacking upper and lower two layers of copper foil gap on quartz sheet; performing second annealing treatment; growing graphene on annealed copper foil by introducing methane and argon, hydrogen, growing graphene; and cooling graphene film, and finishing preparation of graphene film. USE - The method is useful for preparing few-layer graphene film by normal pressure chemical vapor deposition. ADVANTAGE - The method is simple and economical. The graphene film has uniform and controllable layer number, large area, high purity, high light transmittance. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for preparing few-layer graphene film by normal pressure chemical vapor deposition (Drawing includes non-English language text).