• 专利标题:   Manufacturing graphene structure involves providing gas including semiconductor material and gas including carbon into reaction chamber, and performing chemical vapor deposition to form core of semiconductor material and shell of graphene.
  • 专利号:   US2016052788-A1, US9868640-B2
  • 发明人:   LEE E, CHOI B, LEE J, WHANG D
  • 专利权人:   SAMSUNG ELECTRONICS CO LTD, SAMSUNG ELECTRONICS CO LTD
  • 国际专利分类:   C01B031/04, B82Y030/00, B82Y040/00, C01B032/186, C01B032/194, H01B001/04, H01B001/24
  • 专利详细信息:   US2016052788-A1 25 Feb 2016 C01B-031/04 201617 Pages: 8 English
  • 申请详细信息:   US2016052788-A1 US929842 02 Nov 2015
  • 优先权号:   KR124398

▎ 摘  要

NOVELTY - Graphene structure (100) is manufactured which involves providing a gas including a semiconductor material and a gas including carbon into a reaction chamber; and performing chemical vapor deposition to form a core (110) of the semiconductor material and a shell (120) of graphene on the surface of the core. USE - The method is useful for manufacturing graphene structure (claimed), graphene dot structure, or graphene dot network used in energy field, and used as an electrode or a conductive layer in a lithium ion battery, a hydrogen storage apparatus, a sensor, a capacitor, an optical device, or an electronic device. ADVANTAGE - The graphene dot structure and the graphene dot network may have the characteristics of graphene, such as high electric charge mobility, and excellent thermal characteristics. In addition, the graphene dot structure and the graphene dot network may be used in an energy field having high efficiency and high reactivity, due to having a large surface area due to a three-dimensional structure. DESCRIPTION OF DRAWING(S) - The drawing shows an illustrative view of graphene dot structure. Graphene dot structure (100) Core (110) Shell (120)