▎ 摘　　要

NOVELTY - The preparation method of easy-to-exfoliate near-free state graphene, involves: (S1) pretreating metal substrates; (S2) placing the metal substrate in the quartz assembly, placing a buffer material between the quartz assembly and the metal substrate, and placing it in a reaction furnace, and using an inert gas to clean and vacuum the furnace chamber; (S3) introducing a carrier gas into the furnace chamber, adjusting the furnace chamber to the target pressure, increasing it to the target temperature, and performing high-temperature annealing on the substrate to obtain a metal substrate with a specific crystal plane; (S4) increasing the temperature to the temperature required for graphene growth, and feeding the reaction gas to carry out graphene nucleation and lateral growth; (S5) cooling down to room temperature, after the growth is completed, to obtain graphene; and (S6) carrying out post-treatment of graphene, introducing post-processing gas into the reaction chamber. USE - Preparation method of easy-to-exfoliate near-free state graphene useful in the field of semiconductor electronic devices and energy conversion (claimed) ADVANTAGE - By designing and adjusting the growth process and post-treatment process, the method significantly reduces the interaction between graphene and the substrate without introducing other impurities, and directly prepares easy-to-exfoliate near-free state graphene. DETAILED DESCRIPTION - The preparation method of easy-to-exfoliate near-free state graphene, involves: (S1) pretreating metal substrates; (S2) placing the metal substrate in the quartz assembly, placing a buffer material between the quartz assembly and the metal substrate, and placing it in a reaction furnace, and using an inert gas to clean and vacuum the furnace chamber; (S3) introducing a carrier gas into the furnace chamber, adjusting the furnace chamber to the target pressure, increasing it to the target temperature, and performing high-temperature annealing on the substrate to obtain a metal substrate with a specific crystal plane; (S4) increasing the temperature to the temperature required for graphene growth, and feeding the reaction gas to carry out graphene nucleation and lateral growth; (S5) cooling down to room temperature, after the growth is completed, to obtain graphene; and (S6) carrying out post-treatment of graphene, introducing post-processing gas into the reaction chamber, adjusting the pressure and temperature of the furnace chamber, preferentially reacting the highly active metal substrate, and passivating the interface to form a stable compound, thus eliminating the interaction between graphene and the metal substrate. An INDEPENDENT CLAIM is included for the easy-to-exfoliate near-free-state graphene.