▎ 摘　　要

NOVELTY - Formation of graphene-boron nitride interface involves exposing ruthenium substrate to ethylene, exposing the resultant ruthenium substrate to oxygen, and exposing the ruthenium substrate to borazine. USE - Formation of graphene-boron nitride interface used in formation of graphene-boron nitride heterostructure and synthesis of tunable homogeneous ternary carbon-boron-nitrogen alloy phase used as two-dimensional membrane (all claimed) for white light-emitting diode for optoelectronic device. ADVANTAGE - The method enables formation of graphene-boron nitride interface with reduced intermixing along boundary interfaces. The heterostructure formed using the graphene-boron nitride interface is capable of emitting deep ultraviolet radiation. The structure of monolayer graphene and hexagonal boron nitride are closely aligned in-plane, consistent with micro low-energy electron diffraction. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) formation of graphene-boron nitride heterostructure; and (2) synthesis of tunable homogeneous ternary carbon-boron-nitrogen alloy phase.