▎ 摘　　要

NOVELTY - The phototransistor has a board. A source electrode and a drain electrode are spaced apart from each other on the substrate. A photosensitive channel layer is arranged on the substrate and connecting the source electrode and the drain electrode. A dielectric layer is arranged over the photosensitive channel layer. A gate electrode is arranged over the dielectric layer. The dielectric layer is formed of poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3). The source electrode and the drain electrode are formed of graphene. USE - Phototransistor for imaging device (claimed). ADVANTAGE - The efficiency of the image pattern recognition process is improved by identifying image patterns in a series of light inputs without unnecessary data communication, storage and processing. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an imaging device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view shows the structure of pV3D3-PTr.