• 专利标题:   Making strip shaped graphene layer used on semiconductor devices involves providing graphene film on metal substrate; adhering nanotube structure with strip-shaped gap on graphene film; applying voltage to nanotube graphene structure.
  • 专利号:   US2013264011-A1, CN103359721-A, TW201341301-A, CN103359721-B, TW485100-B1, US9216908-B2
  • 发明人:   LIN X, JIANG K, FAN S
  • 专利权人:   HON HAI PRECISION IND CO LTD, UNIV TSINGHUA, HONGFUJIN PRECISION IND SHENZHEN CO LTD, UNIV TSINGHUA, HON HAI PRECISION IND CO LTD
  • 国际专利分类:   C01B031/04, B82Y040/00, B82Y030/00
  • 专利详细信息:   US2013264011-A1 10 Oct 2013 C01B-031/04 201370 Pages: 14 English
  • 申请详细信息:   US2013264011-A1 US730860 29 Dec 2012
  • 优先权号:   CN10096864, US730860

▎ 摘  要

NOVELTY - Making strip shaped graphene layer (10) involves: a1) providing graphene film (30) on surface of substrate (20); b1) adhering carbon nanotube structure (40) on graphene film, where carbon nanotube structure includes drawn carbon nanotube film (410) comprising carbon nanotube segments (411) parallel to each other and separated from each other by strip-shaped gap (412); c1) applying voltage to carbon nanotube film structure and adjusting temperature of substrate to remove parts of graphene film contacting carbon nanotube segments; and d1) separating nanotube structure with graphene layer. USE - For making strip shaped graphene layer used on the semiconductor devices such as sensors, transistors, solar cells, and thin film transistors. ADVANTAGE - The process of pulling/drawing ensures that a continuous, uniform, and free-standing drawn carbon nanotube film having predetermined width can be formed. DESCRIPTION OF DRAWING(S) - The figure shows cross-sectional view of method of making the strip shaped graphene layer. Strip shaped graphene layer (10) Substrate (20) Graphene film (30) Carbon nanotube structure (40) Carbon nanotube film (410) Carbon nanotube segments (411) Strip-shaped gap (412)