▎ 摘　　要

NOVELTY - Regulating and controlling graphene band gap comprises preparing graphene sample on a substrate with calibration marks, coating electron beam resist on the graphene sample, using electron beam exposure technique, using the calibration marks, coating electrode, exposing, developing, fixing, obtaining spin-coated electron beam resist, evaporation of metal to obtain graphene sample having an electrode, applying electron beam resist, exposing, developing, fixing, forming pattern of single row holes of graphene in electron beam resist, etching, placing in acetone solution and calculating bandgap. USE - The method is useful for regulating and controlling graphene band gap (claimed). ADVANTAGE - The method: is capable of operating in a wider width to open the band gap of graphene; prepares single-row hole array structure on the graphene strip; prepares graphene strip structure parallel structure with multiple graphene nano belts, thus increasing the drive current capability of the bearing of the graphene strip device and opening the graphene band gap; and increases drive current bearing capacity of the graphene device. DETAILED DESCRIPTION - Regulating and controlling graphene band gap comprises (a) preparing graphene sample on a substrate with calibration marks, (b) coating electron beam resist on the graphene sample at a predetermined thickness, (c) using electron beam exposure technique, using the calibration marks, coating electrode, exposing, developing, fixing, where electrode pattern is formed on graphene to obtain spin-coated electron beam resist, (d) evaporation of metal on sample surface through dissolution to obtain graphene sample having an electrode, (e) applying electron beam resist to the surface of the graphene sample having the electrode, exposure with electron beam exposure, developing, fixing, forming a pattern of single row holes of graphene in the electron beam resist, and the excess part of the exposure, forming graphene tape, (f) using an electron beam resist as etching mask, using oxygen plasma etching, etching uncovered graphene, to obtain a pattern having a single row of hole patterns graphene bands, (g) placing the etched sample in acetone solution and removing remaining electron beam resist, and (h) leading to the back gate aiding substrate, measuring graphene transfer curves at different temperatures, and calculating bandgap.