▎ 摘　　要

NOVELTY - The inverter has a first transistor that includes a first channel unit. The first channel unit includes a first graphene layer (300A) and a p-type first 2D semiconductor layer (400A) contacting the first graphene layer. The second transistor includes a second channel unit arranged laterally with respect to the first channel unit, such that the second channel unit includes a second graphene layer (300B) and an n-type second 2D semiconductor layer (400B) contacting second graphene layer. The first 2D semiconductor layer is chemically bonded to a side of second 2D semiconductor layer. USE - Inverter such as vertical-type inverter with first transistor and second transistor connected to each other, including 2D material. ADVANTAGE - The inverter exhibits high performance, and is able to be operated at a low voltage, and have high mobility characteristic. The inverter exhibits excellent performance, and is easily manufactured. Since multiple inverters are easily manufactured at a large-scale substrate, productivity and cost efficiency are improved. Thus, productivity and cost efficiency is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of manufacturing an inverter. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the method of manufacturing inverter. Common gate electrode (100) First graphene layer (300A) Second graphene layer (300B) First 2D semiconductor layer (400A) Second 2D semiconductor layer (400B)