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  • 专利标题:   Forming graphene structure, comprises forming body with protrusion and forming graphene layer at protrusion outer peripheral surface, or forming cylindrical opening in body and forming graphene layer at inner peripheral surface of opening.
  • 专利号:   DE102015122944-A1, US2016190446-A1, CN105742156-A, US9716227-B2, US2017288145-A1
  • 发明人:   IRSIGLER P, RUHL G, SCHULZE H, SHULZ H, RUHR G, ILSGLLE P
  • 专利权人:   INFINEON TECHNOLOGIES AG, INFINEON TECHNOLOGIES AG
  • 国际专利分类:   B82B003/00, B82Y030/00, B82Y040/00, C01B031/02, D01F009/12, H01L021/02, H01L021/20, H01L021/336, H01L029/16, H01L029/78, H01L029/786, H01L021/324, H01L051/00, C01B031/04
  • 专利详细信息:   DE102015122944-A1 30 Jun 2016 H01L-021/02 201646 Pages: 31 German
  • 申请详细信息:   DE102015122944-A1 DE10122944 30 Dec 2015
  • 优先权号:   US587007, US626234

▎ 摘　　要

NOVELTY - Forming a graphene structure, comprises: forming a body comprising at least one protrusion, and forming a graphene layer at an outer peripheral surface of at least one protrusion (106); or forming at least one cylindrical opening in a body, where a diameter of the opening is represented by (d=78.3x ((n+m)2-nx m)0.5) pm, where n and m are integer values, at least one of n and m is greater than 0, and forming a graphene layer at an inner peripheral surface of the at least one opening. USE - The method is useful for forming a graphene structure (claimed). ADVANTAGE - The method produces graphene structure with accurate pre-defined shape. DESCRIPTION OF DRAWING(S) - The figures 1a, 1b and 1c show the schematic process flow of the method for forming a graphene structure. Semiconductor body (102) Masking structure (104) Protrusion (106) First surface (1021) Second surface (1022)