▎ 摘　　要

NOVELTY - The method involves forming small round spot of island-shaped graphene sheet on single layer graphene using graphene suspension key. The graphene thin film is deposited using atom layer deposition process. The island-shaped graphite of graphene sample is provided using high dielectric medium. The graphene sample is cleaned to remove the impurity. The high dielectric medium thin film is formed on the sample using the atom layer deposition process. USE - Method for growing island-shaped graphene sheet using high dielectric medium during manufacturing of carbon-based integrated circuit. ADVANTAGE - The growing process is performed easily and conveniently. The high dielectric medium thin film is formed efficiently on the graphene. The electrical property of the graphene is increased. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the process for growing island-shaped graphene sheet using high dielectric medium. (Drawing includes non-English language text)