▎ 摘　　要

NOVELTY - Implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source involves ultrasonic cleaning of diamond seed crystals with acetone, deionized water and absolute ethanol in sequence to obtain cleaned single crystal diamond seed crystals, placing the cleaned single crystal diamond seed crystal on the sample holder in the center of the sample table, placing the solid carbon source around the single crystal diamond seed crystal, and controlling the total area of the upper surface of the solid carbon source to be the single crystal diamond seed crystal 10-25 times of the upper surface area, evacuating the CVD reaction chamber to below 5 x 10-3 Pascal, then passing in high-purity hydrogen. USE - Method for implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source. ADVANTAGE - The method realizes fast growth of single crystal diamond. DETAILED DESCRIPTION - Implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source involves ultrasonic cleaning of diamond seed crystals with acetone, deionized water and absolute ethanol in sequence to obtain cleaned single crystal diamond seed crystals, placing the cleaned single crystal diamond seed crystal on the sample holder in the center of the sample table, placing the solid carbon source around the single crystal diamond seed crystal, and controlling the total area of the upper surface of the solid carbon source to be the single crystal diamond seed crystal 10-25 times of the upper surface area, evacuating the CVD reaction chamber to below 5 x 10-3 Pascal, then passing in high-purity hydrogen, and increasing the pressure and microwave power until the temperature of the single crystal diamond seed crystal reaches 900-1000 degrees C, when the solid carbon the source temperature is 650-800 degrees C, closing the inlet valve and the exhaust valve to obtain closed environment in the CVD reaction chamber. The spectrometer is used to monitor the plasma in the CVD reaction chamber, calculated the relative intensity ratio of C2 and Ha in the emission spectrum obtained from the test, adjusted the surface of the solid carbon source by adjusting the microwave power To adjust the etching rate of atomic hydrogen to the solid carbon source, and controlled the relative intensity ratio of C2 and Ha lines to between 0.25-0.55. The growth is terminated, and a single crystal diamond epitaxial growth layer with a certain thickness is obtained on the surface of the single crystal diamond seed crystal.