▎ 摘　　要

NOVELTY - Non-volatile memory device comprises substrate (100), word lines (WL) extending in a first direction on the substrate, ferroelectric patterns (FP) respectively provided on the word lines, blocking insulating film (BIL) covering the ferroelectric patterns, bit line pairs (BP) comprising a first bit line and a second bit line extending in a second direction crossing the word lines and the ferroelectric patterns on the blocking insulating film and intersecting the first direction, and a channel pattern (CHP) provided between the first bit line and the second bit line of each of the bit line pairs on the blocking insulating film, where the channel pattern has an ambipolar conduction characteristic. USE - Non-volatile memory device. ADVANTAGE - The non-volatile memory device comprises a substrate and word lines that are extended in a direction on the substrate, where ferroelectric patterns are provided on the word lines and a blocking insulating film is provided for covering the ferro-electric patterns, which enables to increase the voltage applied to the word line when a memory state is no electron trap state on an upper portion of the blocking insulation film and increases the channel current. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for operating of a non-volatile memory device, which involves: (a) applying a bias voltage between the bit line pairs so that a current flows in the channel pattern; and (b) measuring a degree of change in a channel current while changing a voltage applied to the word line. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of the non-volatile memory device. 100Substrate BILBlocking insulating film BPBit line pairs CHPChannel patterns FPFerroelectric patterns WLWord lines