▎ 摘　　要

NOVELTY - The MOSFET (200) has an n-doped source region (16), a source contact (22) and a contact structure (20) which extends from the source contact to the n-doped source region, forms a first conductive connection with the source contact and forms a second conductive connection with the n-doped source region. The contact structure is formed with a barrier layer (32) and an insulating layer. The contact structure between a first conductive connection and a second conductive connection is provided with a section which is embedded between the barrier layer and the dielectric layer and designed such that a two-dimensional electron gas is formed. USE - Saturation contact MOSFET. ADVANTAGE - The MOSFET has resistance that is significantly greater than the channel resistance, and ensures that the saturation contact can be used to limit the current at high voltages and low resistance can be achieved at low voltages due to high mobility of the two-dimensional electron gas in graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for forming a saturation contact MOSFET. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the saturation contact MOSFET. N-doped source region (16) Contact structure (20) Source contact (22) Barrier layer (32) Saturation contact MOSFET (200)