▎ 摘　　要

NOVELTY - Through-hole epitaxy method involves forming an amorphous insulating layer (120) comprising a nano-sized a through-hole (H1) on a growth substrate (111), forming at least two two-dimensional material layers (130) on the amorphous insulating layer, epitaxially growing at least one semiconductor layer on the two-dimensional material layer, and transferring the semiconductor layer to a target substrate using a support. The two-dimensional material layer of the at least two layers comprises a nano-sized through hole (H2). USE - Through-hole epitaxy method used for manufacturing light emitting device (claimed). ADVANTAGE - The semiconductor layer is epitaxially grown on the growth substrate without limiting the number of layers of the two-dimensional material layer using the 2D material layer including the nano-sized second through-hole. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of light emitting device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the through-hole epitaxial method. 111Growth substrate 120,121Amorphous insulating layer 130,132,133Two-dimensional material layer