• 专利标题:   Preparation of suspended graphene film structure by coating poly(methyl methacrylate) on surface of copper-based graphene film, adding into copper etching solution, etching and removing copper substrate, and spin coating photoresist.
  • 专利号:   CN111422861-A
  • 发明人:   ZHAO L, LI Z, LI L, LUO Y, YANG P, LU D, WANG Y, WANG J, JIANG Z
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   C01B032/194, G01L001/00, G01L009/00, H01L021/027, H01L021/04
  • 专利详细信息:   CN111422861-A 17 Jul 2020 C01B-032/194 202068 Pages: 6 Chinese
  • 申请详细信息:   CN111422861-A CN10382893 08 May 2020
  • 优先权号:   CN10382893

▎ 摘  要

NOVELTY - A suspended graphene film structure is prepared by coating poly(methyl methacrylate) (PMMA) on surface of copper-based graphene film to obtain copper-based/graphene/PMMA structure, adding into copper etching solution, etching and removing copper substrate to obtain PMMA/graphene structure, transferring to silicon-based cavity structure to obtain PMMA/graphene/silicon structure, spin coating photoresist on PMMA surface, photoetching and developing, oxygen plasma patterning graphene structure, and removing photoresist and PMMA with acetone. USE - The method is used for preparing suspended graphene film structure. ADVANTAGE - The method can reduce manufacturing difficulty of suspended graphene, has success rate and ensures covering integrity of suspended graphene film structure.