▎ 摘　　要

NOVELTY - Manufacture of substrate (100) involves forming a silicon carbide layer (14) on a silicon substrate (10), planarizing the upper surface of the silicon carbide layer so that the root mean square roughness of the upper surface of the silicon carbide layer is 12 nm or less, and forming a graphene layer (16) in the upper surface of the silicon carbide layer after performing the planarization process. USE - Manufacture of substrate used for forming electronic apparatus (all claimed) e.g. electronic device, optical device, and sensor device. ADVANTAGE - The method enables manufacture of substrate having excellent film quality of graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of substrate. (Drawing includes non-English language text) Silicon substrate (10) Nitride semiconductor layer (12) Silicon carbide layer (14) Graphene layer (16) Substrate (100)