• 专利标题:   Forming graphene oxide pattern, comprises e.g. preparing substrate, forming self-assembling monomolecular film on substrate, covering film using mask to expose, and removing mask to obtain self-assembling monomolecular film template.
  • 专利号:   CN102557014-A, CN102557014-B
  • 发明人:   CHENG Q, HAN B, SUN S, WU C
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN102557014-A 11 Jul 2012 C01B-031/04 201308 Pages: 13 Chinese
  • 申请详细信息:   CN102557014-A CN10616356 30 Dec 2010
  • 优先权号:   CN10616356

▎ 摘  要

NOVELTY - Forming graphene oxide pattern, comprises preparing a substrate, forming hydrophobic self-assembling monomolecular film on a surface of the substrate, covering the hydrophobic self-assembling monomolecular film using a mask, employing an UV lamp to expose, removing the mask after the exposure to obtain a substrate with the surface containing patterned self-assembling monomolecular film template, covering the patterned self-assembling monomolecular film template with graphene oxide aqueous solution and then drying, and forming graphene oxide pattern on the surface of the substrate. USE - The method is useful for forming graphene oxide pattern, which is useful for preparing a graphene pattern. ADVANTAGE - The method is capable of economically forming the graphene oxide pattern with high efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for forming a graphene pattern comprising heating the graphene oxide pattern at 800-1000 degrees C for 15-60 minutes in a reducing atmosphere.