▎ 摘　　要

NOVELTY - The method involves forming a graphene nano-meter belt layer on a semiconductor substrate. A first oxide layer is formed on the graphene nano-meter belt layer. Multiple grooves are formed in the first oxide layer. A carbon nano-tube is formed in each first groove. Two ends of the carbon nano-tube layer are formed with a second oxide layer. The second oxide layer is fixed in multiple channels. Multiple second grooves are formed with the carbon-nano tube. A catalyst layer is formed with the carbon nano-tube, where the catalyst layer is made up of negative photoresist material. A metal contact layer is formed on two ends of the carbon nano-tube layer. USE - Method for manufacturing a transistor (claimed). ADVANTAGE - The method enables obtaining a carbon nano-tube transistor with the graphene nanometre belt layer, and operating a transistor in a convenient manner at low voltage. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a method for manufacturing a transistor. '(Drawing includes non-English language text)'