▎ 摘　　要

NOVELTY - Preparing low-dimensional nanomaterial electrical device under extreme high pressure based on low-dimensional materials on a diamond anvil comprises (i) cleaning, (ii) performing spin-coating photoresist on the diamond anvil surface, (iii) photo-etching the diamond on the anvil, (iv) evaporating metal electrode from diamond to the anvil, (v) removing the photoresist to the anvil with diamond, (vi) transferring the dielectric layer material, (vii) transferring low-dimensional materials, (viii) performing second spin coating photoresist of the diamond to the anvil, (ix) performing second photo-etching of the diamond to the anvil, (x) performing second evaporation metal electrode of the diamond to the anvil, (xi) removing glue, and (xii) lead. USE - The method is useful for preparing low-dimensional nanomaterial electrical device under extreme high pressure based on low-dimensional materials on diamond anvil used for transferring two-dimensional layered semiconductor material to top anvil of diamond. ADVANTAGE - The method: overcomes the problem that the low dimensional material is difficult to integrate micro-nano electrical device on the diamond anvil surface; solves the problem of the low dimension material under the high compression electrical characteristics research of the device preparing; and provides a new idea for exploring the low-dimensional material micro-nano device under high pressure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a torsion angle graphene field-effect electrical device prepared on a diamond anvil.