▎ 摘　　要

NOVELTY - The method involves providing substrate (10), and growing metal electrode surface (20,30) on two sides of substrate. A thin film semiconductor layer (40) is grown on metal electrode surface and substrate. A portion of thin film semiconductor layer is removed, and one side of metal electrode surface is exposed out. A graphene layer (50) is formed, and structural surface is obtained. The redundant graphene layer and thin film semiconductor layer are removed. The graphene layer and thin film semiconductor layer are contacted with each other to form hetero-junction portion. USE - Photoelectric detector preparing method based on thin film semiconductor-graphene hetero-junction process. ADVANTAGE - The photoelectric detector structure is prepared on semiconductor substrate, the insulation substrate or the flexible substrate easily, and the process cost of the preparing process is effectively saved. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view illustrating the photoelectric detector preparing process. Substrate (10) Metal electrode surfaces (20,30) Thin film semiconductor layer (40) Graphene layer (50)