▎ 摘　　要

NOVELTY - A laminate comprises a base portion comprising silicon carbide and having a main surface (S1), and a graphene film arranged on the main surface (S1) and has an exposed surface which is a main surface opposite to the side on which the base portion is located. In the ion mass distribution in the depth direction of the stack obtained by time-of-flight secondary ion mass spectrometry using bismuth ions as primary ions and cesium ions as sputter ions, the detection intensity of 6C ions having a maximum value at a depth of 0-2.5 nm from the exposed surface, the detection intensity of 3C ions having a maximum value at a depth of 0-3.0 nm from the exposed surface, the detection intensity of silicon tetracarbide ions having a maximum value at a depth of 0.5-5.0 nm from the exposed surface, the detection intensity of silicon carbide ions having a maximum value at a depth of 0.5-10.0 nm from the exposed surface. USE - Laminate used for electronic device (claimed) such as transistor. ADVANTAGE - The laminate effectively improves the modulation characteristics and performance of electronic device. DETAILED DESCRIPTION - A laminate comprises a base portion comprising silicon carbide and having a main surface (S1), and a graphene film arranged on the main surface (S1) and has an exposed surface which is a main surface opposite to the side on which the base portion is located. In the ion mass distribution in the depth direction of the stack obtained by time-of-flight secondary ion mass spectrometry using bismuth ions as primary ions and cesium ions as sputter ions, the detection intensity of 6C ions having a maximum value at a depth of 0-2.5 nm from the exposed surface, the detection intensity of 3C ions having a maximum value at a depth of 0-3.0 nm from the exposed surface, the detection intensity of silicon tetracarbide ions having a maximum value at a depth of 0.5-5.0 nm from the exposed surface, the detection intensity of silicon carbide ions having a maximum value at a depth of 0.5-10.0 nm from the exposed surface, the detection intensity of silicon ions having a maximum value at a depth of 0.5-10.0 nm from the exposed surface. A value obtained by dividing the maximum value of the detection intensity of silicon tetracarbide ions by an average value of the detection intensity of silicon tetracarbide ions in a region for which the distance from the exposed surface in the thickness direction of the laminate of 8-12 nm is 1-3.5.An INDEPENDENT CLAIM is included for electronic device, which comprises the laminate, an electrode (E1) arranged on the exposed surface, and an electrode (E2) arranged on the exposed surface apart from the electrode (E1).