▎ 摘　　要

NOVELTY - Preparing ferromagnetic film epitaxial single-layer graphene involves forming a ferromagnetic film with regular hexagonal lattice properties on an insulating substrate. The insulating substrate and the ferromagnetic thin film lattice properties are matched. The ferromagnetic film is placed in a chemical vapor deposition system, hydrogen and inert gas are introduced, and the temperature is increased to 900-950 degrees C, and the ferromagnetic film is annealed to obtain a single crystal film. A carbon source gas is introduced, the flow ratio of the carbon source gas, hydrogen and inert gas is 1:10-50:50, kept the temperature, and make the carbon epitaxially nucleate on the single crystal film. The carbon source gas and hydrogen is stop passing, keeping warm, make the carbon diffuse on the single crystal film, and cooling at a cooling rate of 150-200 degrees C/min. The graphene is precipitated on the single crystal film to obtain a ferromagnetic film epitaxial single layer graphene. USE - Method for preparing ferromagnetic film epitaxial single-layer graphene. ADVANTAGE - The method enables to prepare ferromagnetic film epitaxial single-layer graphene solves the difficulty of growing single-layer graphene on high-soluble carbon metal materials, guaranteed the epitaxial characteristics of the prepared ferromagnetic metal/graphene interface lattice, has stable interface structure, and improves the performance of related graphene electronic devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a ferromagnetic film epitaxial single-layer graphene, which comprises single graphene layer which is grown on the upper surface of the ferromagnetic film.