▎ 摘　　要

NOVELTY - A graphene nanomesh is manufactured by (A) depositing precursor molecule which has benzene rings to surface of metal substrate which has catalytic activity under vacuum; (B) 1st heating process of heating metal substrate to 1st temperature; and (C) 2nd heating process of heating metal substrate to 2nd temperature higher than 1st temperature. Precursor molecule has n2 pieces of benzene rings, where n is greater than or equal to 2, and has a structure in which benzene rings are in a row in longitudinal direction, sharing an edge. Sequentially from the end of a longitudinal direction, one piece, two pieces, to n-1 piece, n-pieces, n-1 piece, two pieces, and one benzene ring continue in a row, where two halogen groups each comprise the angle of 120 degrees to one benzene ring in both ends, and is bonded with it. USE - Manufacture of graphene nanomesh for field effect transistor manufacture (claimed). ADVANTAGE - A graphene nanomesh which has controllable band gap size can be manufactured stably. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of field effect transistor which involves preparing substrate with which graphene nanomesh is formed on the surface, transferring graphene nanomesh formed on substrate on insulating substrate or conductive substrate with which insulating film is formed on the surface, and forming source electrode and drain electrode on the transferred graphene nanomesh. DESCRIPTION OF DRAWING(S) - The drawing shows a chemical structure of the state when the metal substrate, in which the pseudo-graphene nanomesh is formed, is heated to 400 degrees Celsius. Pores of uniform size (A) Interval between pores formed in graphene nanomesh (L)