▎ 摘　　要

NOVELTY - The method involves stacking two layers of a metal foil (S11). The metal foil is separated by intercalation. A metal foil stacking structure is formed. An inserting layer is reacted with metal foil material. Chemical vapor deposition is utilized (S12) in each surface of the metal foil stacked structure to prepare graphene. Carbon-containing gas temperature is measured for about 800-1080 degree Celsius. The metal foil is provided with copper and copper alloy. The copper alloy is contained with copper-nickel alloy, copper-tin alloy, copper- ruthenium alloy and copper molybdenum alloy. USE - Non-adhesion graphene preparing metal foil layer stacking method. ADVANTAGE - The method enables avoiding mutual adhesion between the metal foil can be disposable in the CVD apparatus chamber into a lot of metal foil, which greatly improves the growth efficiency of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating a non-adhesion graphene preparing metal foil layer stacking method. '(Drawing includes non-English language text)' Step for stacking two layers of a metal foil (S11) Step for utilizing chemical vapor deposition in each surface of the metal foil stacked structure to prepare graphene (S12)