• 专利标题:   Laser device e.g. linear cavity laser device has optical pump that provides energy to semiconductor optical amplifier in resonant optical cavity, and graphene saturable absorber placed partially between surfaces of mirrors.
  • 专利号:   US2013121362-A1, US8885676-B2
  • 发明人:   KUB F J, CURRIE M
  • 专利权人:   KUB F J, CURRIE M, US SEC OF NAVY
  • 国际专利分类:   H01S003/06, H01S003/083, H01S003/09, H01S003/091, H01S003/10, H01S003/11, H01S003/113, H01S005/00, H01S005/028, H01S005/06, H01S005/10, H01S005/14, H01S005/183, H01S005/34, H01S005/50
  • 专利详细信息:   US2013121362-A1 16 May 2013 H01S-003/06 201335 Pages: 21 English
  • 申请详细信息:   US2013121362-A1 US676608 14 Nov 2012
  • 优先权号:   US559308P, US676608

▎ 摘  要

NOVELTY - Linear cavity laser device (100) has small and large mirrors (110,120) with surfaces (112,114). The two mirrors define a resonant optical cavity in which electromagnetic energy is amplified by stimulated emission of coherent radiation that is partially transmitted through the large mirror. A semiconductor optical amplifier (140) is located partially between the surfaces of mirrors. An electrical or optical pump (150) provides energy to the semiconductor optical amplifier, and a graphene saturable absorber (130) is located partially between surfaces of mirrors. USE - Laser device e.g. linear cavity laser device (claimed), external cavity laser device, extended cavity laser device, and ring cavity laser device. ADVANTAGE - Linear cavity laser device with a compact structure is achieved. The graphene saturable absorber does not need any additional engineering and operates at all wavelengths from the visible through the infrared. The graphene material has a very high thermal conductivity that effectively removes absorbed heat in both the saturated and unsaturated cases. The laser crystal easily stores the energy in the form of nanosecond pulse and leads to peak power. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional side view of the linear cavity laser device with graphene saturable absorber and gas cell located between second end of semiconductor optical amplifier and partially reflective mirror. Linear cavity laser device (100) Small mirror (110) Surface of small mirror (112) Surface of large mirror (114) Large mirror (120) Graphene saturable absorber (130) Semiconductor optical amplifier (140) Optical pump (150)