▎ 摘　　要

NOVELTY - A tantalum capacitor cathode terminal preparing method involves pre-treating graphite with acid under protection of argon gas environment to quickly heat at 900-1200 degrees C to form expanded graphite. The expanded graphite is oxidized by Hummers method to form graphene oxide. The graphene oxide is immersed in a tantalum core, followed by repeating the steps for 10-20 times, increasing the ratio of the column impregnation according to concentration gradient, impregnating for 2-4 times to finish a coated tantalum capacitor cathode material, and placing in oven at 60-100 degrees C for drying. USE - Method for preparing tantalum capacitor cathode lead. ADVANTAGE - The method enables preparing tantalum capacitor cathode terminal with high conductivity, improved weak coupling condition of an original manganese dioxide and outer graphite material, improved contact resistance between different materials so as to reduce interface resistance with high excellent performance of a tantalum capacitor. DETAILED DESCRIPTION - A tantalum capacitor cathode terminal preparing method involves pre-treating graphite with acid under protection of argon gas environment to quickly heat at 900-1200 degrees C to form expanded graphite. The expanded graphite is oxidized by Hummers method to form graphene oxide at mass percentage of 5, 10, 20, 35 and 50 graphene oxide. The graphene oxide is immersed in a tantalum core at temperature of 200-300 degrees C under environment to decompose to obtain uniform single-layer graphene, followed by repeating the steps for 10-20 times, increasing the ratio of the column impregnation according to concentration gradient, impregnating for 2-4 times to finish a coated tantalum capacitor cathode material, and placing in oven at 60-100 degrees C for drying.