▎ 摘　　要

NOVELTY - The device has a substrate (10) that comprising a first insulating layer (11), a two-dimensional electron gas (12) and second insulating layer (13). The graphene layer (20) is formed over the second insulating layer, and an electrode (30) formed over the second insulating layer and in contact with the graphene layer. The effective thickness of the two-dimensional electron gas is less than 10nm. The two-dimensional electron gas is an oxide interface two-dimensional electron gas. The first insulating layer is barium titanate, and the second insulating layer is barium aluminate. The material of the electrode comprises titanium, palladium, and gold. The third insulating layer is made of hexagonal boron nitride. USE - Robust graphene quantum Hall device. ADVANTAGE - The device greatly improves the performance of the graphene device and enhances the robustness of the quantum Hall effect by using a preferred functional substrate material, and greatly reduce the production cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a robust graphene quantum Hall device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural diagram of a robust graphene quantum Hall device. Substrate (10) First insulating layer (11) Two-dimensional electron gas (12) Second insulating layer (13) Graphene layer (20) Electrode (30)