▎ 摘　　要

NOVELTY - Chemically etching graphene-catalyzed silicon, comprises (a) laminating graphene layer (220) on the silicon layer (210), (b) forming nano-templates on the laminated graphene layer and forming graphene nanostructure with pattern mask, and (c) forming silicon nanostructure on the silicon layer by chemical etching process using graphene nanostructure as catalyst. USE - The method is useful for producing semiconductor nanostructure. ADVANTAGE - The method can perform in strongly acidic solution having high toxicity. DETAILED DESCRIPTION - Chemically etching graphene-catalyzed silicon, comprises (a) laminating graphene layer on the silicon layer, (b) forming nano-templates on the laminated graphene layer and forming graphene nanostructure with pattern mask, and (c) forming silicon nanostructure on the silicon layer by chemical etching process using graphene nanostructure as catalyst. The silicon nanostructure includes silicon nano wire, silicon cone arrays, silicon hole arrays or porous silicon formed by chemical etching process using etching solution containing hydrofluoric acid and hydrogen peroxide under environment condition. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the. Silicon layer (210) Graphene layer (220) Nanospheres array (230)