▎ 摘　　要

NOVELTY - The method involves preparing a thin graphene film on side of a silicon dioxide substrate using a mechanical stripping process. The substrates with thin graphene are soaked in acetone, isopropanol and deionized water. The substrates are placed into a chemical vapor deposition (CVD) reactor. The positions of the sulfur source and the molybdenum source are adjusted. A thin layer of molybdenum disulfide is grown on the substrate to obtain a graphene/molybdenum disulfide heterojunction. USE - Preparation method of thin layer graphene/molybdenum disulfide lateral heterojunction (claimed). ADVANTAGE - The environment pollution caused by material is prevented. The success rate of graphene/molybdenum disulfide lateral heterojunction is improved. The preparation process of thin layer graphene/molybdenum disulfide lateral heterojunction is simplified. The production quantity of heterojunction material is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a thin layer graphene/molybdenum disulfide lateral heterojunction. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the silicon dioxide substrate.